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000-957 IBM XIV Storage System Technical(R) Solutions V3

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000-957 exam Dumps Source : IBM XIV Storage System Technical(R) Solutions V3

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: 195 true Questions

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IBM IBM XIV Storage System

IBM Launches Converged gadget tailored to computer gaining erudition of purposes | killexams.com true Questions and Pass4sure dumps

IBM Launches Converged system tailored to machine learning ApplicationsLane long posted on December 21, 2018 | IBM’s latest AI solution leans heavily on NVIDIA’s DGX-1 hardware. (Image courtesy of zdnet.com.)

IBM’s newest AI solution leans closely on NVIDIA’s DGX-1 hardware. (image courtesy of zdnet.com.)

Citing research that means a vast majority of bar no one at all commercial enterprise applications will assume erudition of synthetic intelligence by way of 2021, IBM has introduced the launch of a brand novel converged gadget optimized for AI. Dubbed “Spectrum AI,” the brand novel platform is designed for the facts middle, with machine studying on the core of its performance. IBM’s latest offering comes amid a string of AI-superior methods powered by NVIDIA’s DGX-1 suite to hit the market this yr, with Cisco, NetApp and sheer Storage Inc. additionally debuting platforms.  

NVIDIA brings vast computing energy

Powered via NVIDIA’s DGX-1, Spectrum AI will in lots of approaches resemble the U.S.C480 ML M5 server released through Cisco returned in September that featured eight of NVIDIA’s Tesla V100 images playing cards. The eight playing cards characterize over 45,000 processing cores, 5,000 of which might exist “Tensor Cores” which are optimized for AI. The upshot of those records is that IBM’s novel DGX-1-primarily based materiel will carry over a petaflop of processing power. In computing phrases, this means the platform might exist capable of operate over a quadrillion floating constituent operations per second.

IBM supplies clients extra flexibility and capacity than ever before

IBM plans to tie an enterprise-friendly bow round this kit via integrating the system with its Elastic Storage Server, which brings a petabyte of glint storage and may flee its Spectrum Scale management software. Spectrum Scale is adapted to tackle huge statistics volumes while simultaneously bringing valuable administrative services, relish a built-in device that enables agencies emigrate facts to the common public cloud at intervals. primarily, IBM’s Summit—the present title-holder for “world’s strongest supercomputer”—is outfitted with Spectrum Scale.

while that should allot to relaxation any doubts as to the robustness of IBM’s novel rollout, there’s besides this tidbit—Spectrum AI additionally comes outfitted with NVIDIA’s these days-brought RAPIDS framework. Designed to speed up the efficiency of a server’s GPUs, the assortment of frequent machine researching libraries optimizes profound getting to know functions by using enabling even more iterative modeling. 

a variety of spend probabilities 

A graphical layout of Spectrum AI’s value model. (Image courtesy of IBM.)

A graphical design of Spectrum AI’s value mannequin. (picture courtesy of IBM.)

IBM bills Spectrum AI as an respond to initiatives of bar no one at all sizes. companies can customise the platform to their wants by manipulating the quantity of storage hardware and DGX-1 devices in keeping with the size of information sets. As AI and desktop studying more and more compel trade decisions at groups of bar no one at all sizes, the potential to personalize an answer’s computing vigor is a positive device in the arsenal of concomitant executives.


IBM Brings SSD Caching assist to the XIV Gen3 Storage materiel | killexams.com true Questions and Pass4sure dumps

IBM has currently announced that it has introduced a sequence of latest enhancements to its XIV Storage materiel Gen3, including attend for a brand novel strong state pressure (SSD) caching option, that is asserted to extend system performance by using up to thrice.

in response to IBM, going for the IBM XIV SSD Caching alternative adds as much as 6TB of quick-examine SSD storage to its programs, which is positioned between the gadget memory and tough drives.

this is then used as a quick cache for essentially the most frequently accessed information, for that reason dramatically reducing latency times when compared to mechanical storage.

"These newest updates to XIV Gen3 are a very apt instance of IBM's persisted commitment to helping valued clientele obtain enterprise consequences via smarter storage applied sciences," mentioned Doug Balog, vice president and trade line govt for IBM Storage systems.

"It comes down to saving shoppers time and money with extraordinarily productive, without problems managed, virtualized, and excessive-performing storage systems relish XIV Gen3," concluded the business’s rep.

besides IBM XIV SSD Caching, IBM introduced the skill to replicate statistics between previous models of XIV and XIV Gen3 techniques, in an endeavor to ease information migration and support supply valued clientele flexibility to repurpose their XIV models as catastrophe recovery backup techniques.

The XIV Storage device Gen3 become added by means of IBM in the headquarters of closing 12 months as a novel era of storage options designed to reduce the whole can impregnate of ownership, and extend system efficiency by means of 4 instances over the ancient mannequin.

With XIV Gen3, IBM additionally replaced the equipment's Ethernet-based mostly backplane with a excessive-performance InfiniBand backplane, that increased the equipment's internal bandwidth between modules with the aid of 40 times.

The XIV Storage device Gen3, along side its SSD Caching alternative, is accessible at this time from IBM, with pricing being offered upon request.


IBM hurries up XIV Storage system Gen3 With SSD Caching | killexams.com true Questions and Pass4sure dumps

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000-957 IBM XIV Storage System Technical(R) Solutions V3

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000-957 exam Dumps Source : IBM XIV Storage System Technical(R) Solutions V3

Test Code : 000-957
Test title : IBM XIV Storage System Technical(R) Solutions V3
Vendor title : IBM
: 195 true Questions

Take these 000-957 questions and solutions earlier than you visit vacations for check prep.
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Dell Power Edge R730

The power Edge R730 is a two-socket 2U rack server with impressive processor performance, a great memory footprint, extensive I/O options.

The R730 supports up to two Intel Xeon E5–2600 v3 processors, up to 24 DIMMs, and 16 arduous drives or SSDs.

The R730 has the traditional rack-mount server design with a heavy, robust and extremely well engineered all-metal chassis design with a lift-off lid for ease to service.

Dell Power Edge R 730 front panel

Font Panel:

The R730 supports up to 16 x 2.5” or up to 8 x 3.5” front-accessible, hot-plug arduous drives that are secured by a removable front bezel.

Other front-panel features comprehend an interactive LCD control panel, USB management port/iDRAC Direct, a video connector and a vFlash media card slot.

Power-on indicator, power button: The power-on indicator lights when the system power is on. The power button controls the power supply output to the system.

NMI button :Used to troubleshoot software and device driver errors when running inevitable operating systems. This button can exist pressed using the terminate of a paper clip. spend this button only if directed to execute so by qualified support personnel or by the operating system documentation.

LCD menu buttons: Navigate the control panel LCD menu

System identification button: The identification buttons on the front and back panels can exist used to locate a particular system within a rack. When one of these buttons is pressed, the system status indicator on the back flashes until one of the buttons is pressed again. Press to toggle the system ID on and off.

Video connector :Connect a VGA array to the system.

Information tag: A slide-out label panel which allows to record system information such as Service Tag, NIC, MAC address .

USB management port/ iDRAC Direct:Connect USB devices to the system or provides access to the iDRAC Direct feature

Hard drives: Up to eight 3.5 inch hot-swappable drives

USB connector: Connect USB devices to the system. The ports are USB 2.0-compliant.

Quick Sync (optional) :Indicates a Quick Sync enabled system. The Quick Sync feature is optional and requires a Quick Sync bezel. This feature allows management of the system using mobile devices. This feature aggregates hardware/firmware inventory and various system flush diagnostic/error information that can exist used in troubleshooting the system

Optical drive (optional): One optional SATA DVD-ROM drive or DVD+/-RW drive

vFlash media card slot :To insert a vFlash media card.

LCD panel: Displays system ID, status information, and system oversight messages. The LCD lights blue during regular system operation. The LCD lights amber when the system needs attention, and the LCD panel displays an oversight code followed by descriptive text.

The dell power Edge R730 is a model server for data warehouses, e-commerce, virtual desktop infrastructure (VDI), databases and high-performance computing HPC).

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St. Petersburg State Polytechnical to Acquire 1.1 Petaflops from RSC Group | killexams.com true questions and Pass4sure dumps

rscToday Russian supercomputing vendor RSC Group announced a shrink to build a pair of supercomputers for St. Petersburg State Polytechnical University (SPbSPU). With combined peak performance of over 1.1 Petaflops, the systems will exist the first Russian supercomputers based on the newest Intel Xeon E5-2600 v3 server processor.

SPbSPU will believe the most innovative and one of the largest supercomputer centers in Russia based on a heterogeneous system with RSC direct liquid cooling containing a supercomputer system based on revolutionary high-density massively parallel solution RSC PetaStream and a powerful cluster system based on RSC Tornado architecture. Their solutions believe set the world records of computing and power density per volume. They are sure that unique and extensive undergo of RSC specialists in progress of highly efficient direct liquid cooling technologies and ultra-dense integration of supercomputer solutions based on industry standard server components will enable implementation of this project at the highest flush involving usage of the latest supercomputer technologies including the newest Intel Xeon E5-2600 v3 processor that was recently launched by Intel.” said Alexey Shmelev, COO of the RSC Group.

Supply and testing of materiel for the project will exist completed by the terminate of 2014 and official launch of the novel SPbSPU supercomputer headquarters is planned for 2015.

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Sorting Out Next-Gen memory | killexams.com true questions and Pass4sure dumps

In the data headquarters and related environments, high-end systems are struggling to support pace with the growing demands in data processing.

There are several bottlenecks in these systems, but one segment that continues to receive an inordinate amount of attention, if not section of the blame, is the memory and storage hierarchy.

SRAM, the first tier of this hierarchy, is integrated into the processor for cache to enable fleet data access. Then, DRAM, the next tier in the hierarchy, is used for main memory. And finally, disk drives and NAND-based solid-state storage drives (SSDs) are used for storage.

In 2007, SSDs entered the data center. SSDs helped reduce the growing latency gap between DRAM and disk drives in systems by a factor of 10, according to Forward Insights. But with an ongoing explosion of data, there is roughly a 1,000X latency gap between DRAM and NAND in today’s systems.

“The market is now trying to consume more bits at a faster rate,” said Jon Carter, vice president of storage emerging memory products at Micron Technology. “We’ve innovated the network, storage stack and the software stack. Now, the bottleneck is the underlying memory.”

In fact, for years, the industry has been searching for a novel memory type that can solve the latency gap. In theory, the technology would believe the performance of DRAM and the cost and nonvolatile characteristics of flash.

Some refer to that as storage-class memory. As before, the next-generation memory types comprehend MRAM, phase-change, ReRAM and even carbon nanotube RAMs.

Today, some of these technologies are shipping or sampling in the market. But some will never earn it due to cost and technical factors. “Emerging memories believe been in the lab for a decade,” said Gregg Bartlett, senior vice president of the CMOS Platforms trade Unit at GlobalFoundries. “Emerging memories believe always offered a lot of promise. But the question is, can you manufacture them? Now, it is making a transition into mainstream technology.”

So, which technologies ultimately will prevail? There are no simple answers. To attend OEMs rep ahead of the curve, Semiconductor Engineering has taken a explore at the status of the novel memory types and the challenges ahead.

Wanted: Universal memoryYears ago the industry hoped to develop a so-called universal memory, which in theory was a single device that could supplant DRAM, glint and SRAM. At that time, the universal memory candidates were the selfsame technologies vying for dominance today—MRAM, phase-change, and ReRAM.

But because of the complexity and soaring I/O requirements in systems, there was no single next-generation memory type that could supplant existing memory. And conventional memory scaled much further than previously thought, pushing out the need for the next-generation memory technologies.

Today, though, there is leeway for a novel memory type, thanks to the growing latency gap in systems. A novel technology won’t supplant everything, but it could play a role in specific applications and would co-exist with today’s memories.

“I would hope these advanced memories to first find homes in applications that recognize or leverage one of their unique advantages,” said David Fried, chief technology officer at Coventor. “I would besides hope there to exist several different technologies that win in the end, just as SRAM, DRAM and NAND believe coexisted for generations.”

Others agree. “With the IoT, self-driving cars and cloud storage, the appetite for a different class of memories is exploding,” said Harmeet Singh, vice president of dielectric etch products at Lam Research. “We hope the next-generation memories will co-exist with other memories, with 3D NAND being the workhorse for nonvolatile memory.”

But not bar no one at all companies, or bar no one at all of the newfangled memory types, will succeed. “There is only a inevitable amount of leeway for these technologies,” said Er-Xuan Ping, managing director of memory and materials within the Silicon Systems Group at Applied Materials.

3D XPoint, a next-generation memory type, could find a position for inevitable applications, according to Ping. “The other memories believe a chance, but they need to pick up the pace to ensnare up,” he said.

And in the near term, it’s unlikely that the next-generation technologies will supplant existing memory. “Today’s memory has been highly optimized in terms of the economics. DRAM is cheap for its functionality. NAND is too,” he said. “Anything novel to supplant that in terms of cost is very difficult.”

3D XPoint versus Z-SSDMeanwhile, there are several ways to reduce the latency gap in systems. One approach is to develop faster SSDs using next-generation NAND and/or a novel memory type.

Today, planar and 3D NAND are used in SSDs. Planar NAND is running out of steam at the 1xnm node, prompting the need for a replacement technology. That replacement is 3D NAND, which resembles a vertical skyscraper in which horizontal layers are stacked and then connected using tiny vertical channels.

SSDs believe been touching into PCs. But the true action is taking position in the enterprise, where SSDs are displacing traditional disk drives. Disk drives for high-end servers believe rotation speeds of 10,000 and 15,000 RPMs.

“In general, NAND glint pricing continues to decrease year-over-year,” said Ryan Smith, director of NAND product marketing at Samsung Semiconductor. “The expense points believe become attractive enough for SSDs to displace 10K and 15K drives rapidly.”

Generally, though, NAND has some issues. Basically, a NAND device must exist programmed. Data is written into a tiny conceal in the device. Generally, the data can exist retrieved and read, but it can’t exist updated in the block. To update it, the conceal must exist erased and re-written.

At times, this process is too slow, at least for some high-end applications, according to experts. As a result, the market is ripe for a novel memory technology that can attend speed up the system.

For this, there are several candidates, such as 3D XPoint, ReRAM and now Z-SSD. Co-developed by Intel and Micron, 3D XPoint is supposedly up to 1,000 times faster and has up to 1,000 times greater endurance than NAND, and is 10 times denser than conventional memory.

3D XPoint fills the gap between NAND and DRAM. Intel will incorporate a 3D XPoint device in an enterprise SSD and a DIMM for servers. Meanwhile, Micron will spend the device for an enterprise SSD. “3D XPoint is an enterprise product,” Micron’s Carter said. “You will view it in the elevated terminate of the SSD space. It will drive mission-critical workloads.”

3D XPoint faces some challenges, however. First, Intel and Micron will need to develop an entire novel ecosystem, such as the controllers, for the technology. Then, Intel and Micron will need to drive down the costs for 3D XPoint, but this won’t happen overnight. “I’m expecting it to exist a money-losing proposition for the first brace of years after it comes out,” said Jim Handy, an analyst with Objective Analysis. “And if it doesn’t believe pricing below DRAM, then it’s not going to earn any sense in the memory hierarchy.”

And what exactly is 3D XPoint? So far, Intel and Micron haven’t disclosed many details about the technology.

Initially, a 3D XPoint device will near in 128-gigabit densities. The first devices will consist of two stacked layers. Perpendicular conductors connect the two layers. The conductors believe a separate switching constituent and memory cell. Each memory cell stores a single bit of data.

Based on various calculations, 3D XPoint is a 19nm technology, according to Seshubabu Desu, a memory expert and chief technology officer at 4DS, a ReRAM startup. Desu recently gave a presentation, where he provided insights into the novel memory types.

“(Both Intel and Micron) insist that 3D XPoint is not phase-change memory,” Desu said. “They execute philosophize the switch, or the selector, is an ovonic threshold switch. That’s a chalcogenide-based material.”

An ovonic switch, a two-terminal device, is reminiscent of phase-change memory, sometimes called PCM. PCM stores information in the amorphous and crystalline phases. It can exist reversibly switched with an external voltage.

All told, 3D XPoint incorporates the characteristics of both phase-change and ReRAM. “(3D XPoint) is a flavor of PCM,” Desu said.

3D XPoint could exist scaled from 19nm to 15nm, but pushing it to 10nm and beyond remains challenging, according to experts. “The maximum density you can rep if you spend the current lithography techniques is around maybe 4 or 6 stacks. That gives you 512 gigabits,” Desu said.

Meanwhile, in response to 3D XPoint, Samsung recently rolled out a novel technology called Z-SSD. Based on NAND, Z-SSD is targeted for high-end enterprise SSDs. Z-SSD incorporates a novel circuit design and controller, enabling 4X lower latency and 1.6X better sequential reading than existing high-end SSDs.

Samsung is exploring various next-generation memory types in the lab, but the company said that it makes more sense to develop a novel and faster version of NAND for high-end applications. “The reason why they picked a NAND-based technology is because it’s a proven technology,” Samsung’s Smith said. “We wanted to pick something that was in production and already had the efficiencies built in. So in other words, it has the cost structure that the market wants.”

Still, Samsung has yet to disclose the details behind Z-SSD. “Z-SSD is Samsung’s counter to 3D XPoint,” said Alan Niebel, president of Web-Feet Research. “Z-SSD uses a profile of V-NAND (3D NAND), which is probably TLC with shorter bit lines, enabling this to exist low-latency NAND.”

Embedded memory battleSamsung, according to Niebel, is working on other memory types. “They will ship (Z-SSD) first,” he said. “And later, they will bring out MRAM and ReRAM as the infrastructure is able to support them.”

Others besides are working on ReRAM, which is supposedly the successor to 3D NAND. ReRAM is nonvolatile and based on the electronic switching of a resistor constituent material between two stable resistive states. ReRAM delivers fleet write times with more endurance than today’s flash.

ReRAM is a difficult technology to develop. In addition, 3D NAND will likely extend further than previous expectations, pushing out the need for ReRAM as a viable replacement for NAND.

Initially, though, ReRAM and other next-generation memory types are touching into the embedded market. Today, the embedded market is dominated by traditional glint memory. Embedded glint is used in microcontrollers (MCUs) and other devices.

The mainstream market for embedded glint is at 40nm and above, although the industry is genesis to migrate towards smaller geometries. “The focus on the progress side is on 28nm,” said Walter Ng, vice president of trade management at UMC.

There are other changes as well. “There is a set of customers using nonvolatile memory in the MCU space. They believe to hit a particular time to market. In general, they are driving with those customers on the more traditional solutions. But they besides believe an interest in some of the other and more unique solutions,” Ng said.

For embedded, the novel solutions comprehend ReRAM, MRAM and carbon nanotube RAMs. In 2013, Panasonic shipped the world’s first ReRAM for embedded applications. It integrated a 180nm ReRAM device with an 8-bit controller.

More recently, Adesto is shipping a ReRAM-based technology called conductive bridging RAM (CBRAM). Targeted for the EEPROM replacement market, Adesto’s latest CBRAMs believe 50 to 100 times lower power than comparable memory products.

Another company, Crossbar, will shortly ship an 8-megabit ReRAM for the embedded market. Build on a 40nm process, Crossbar’s ReRAM is based on a 1T1R (one transistor/one resistor) technology.

“Embedded ReRAM is much faster and has lower power than existing glint technologies,” said Sylvain Dubois, vice president of marketing and trade progress at Crossbar. “It’s a bit-alterable memory. You don’t believe to delete a plenary conceal and program a plenary page to update your memory.”

Crossbar’s next chip is 1-gigabit ReRAM, based on 28nm. “It could exist for high-density embedded as well as standalone applications,” said George Minassian, chief executive of Crossbar. “It will disappear after NOR.”

screen-shot-2016-09-20-at-8-24-50-pmFig. 1: Crossbar’s ReRAM architecture uses non-conductive, amorphous silicon as the host material for metallic filament formation. Source: Crossbar

Then, in another development, Fujitsu recently licensed Nantero’s NRAM, a nonvolatile RAM based on carbon nanotubes. NRAM claims to exist faster than DRAM and nonvolatile relish glint with essentially zero power consumption.

Today, the industry continues to develop traditional embedded flash, but it is besides working on the next-generation technologies. So will the next-generation memory types displace traditional embedded flash? “I don’t believe, nor does anybody else feel, that a switch will exist thrown overnight and they will disappear from some of the traditional solutions to some of these other solutions,” UMC’s Ng said.

What about MRAM?Meanwhile, the momentum is pile for a second-generation MRAM technology called spin-transfer torque MRAM (STT-MRAM). MRAM uses the magnetism of electron spin to provide non-volatility. MRAM delivers the speed of SRAM and the non-volatility of glint with unlimited endurance.

Several companies are working on STT-MRAM, although Everspin is still the only vendor shipping it. Everspin refers to its technology as ST-MRAM. Everspin’s latest ST-MRAM is a 256-megabit device with a DDR-3 interface. It is based on a 40nm process from its foundry partner, GlobalFoundries.

sttmram_cell_switchingdynamics_kimarticleFig. 2: STT-MRAM memory cell and dynamic spin motion. Source: University of Minnesota, College of Science & Engineering.

Everspin’s novel device could solve a major problem. In simple terms, SSDs spend a DRAM-based buffer to attend speed up the system. But if the system loses power, the data is at risk. To solve the power loss issues, SSDs will besides incorporate capacitors, but this adds cost to the system.

To solve that issue, ST-MRAM could exist incorporated in the write-buffer socket in the SSD. ST-MRAM is a persistent, nonvolatile memory. “Then, you can eradicate the need for these banks of capacitors,” said Joe O’Hare, director of product marketing at Everspin.

Everspin is besides developing a 1-gigabit ST-MRAM, based on a 28nm process from GlobalFoundries. At the selfsame time, GlobalFoundries is developing an embedded version of Everspin’s ST-MRAM technology.

Initially, GlobalFoundries’ eMRAM technology will exist offered on its 22nm FD-SOI platform. “We will execute both code storage and working data storage,” GlobalFoundries’ Bartlett said. “We will eventually exist able to execute very great arrays of L3 cache with a footprint smaller than 6T STRAM.”

To exist sure, there are several applications for MRAM. “STT-MRAM has several clearly-visible, high-volume and low-hanging fruits,” said Barry Hoberman, chief executive of Spin Transfer Technologies, a developer of STT-MRAM Technology. “I view powerful opportunities in storage, mobile, automotive and IoT. STT-MRAM is well-suited for both stand-alone and embedded applications.

“In the very long-term, I execute arbiter that the MRAM bit-cell will become smaller and less expensive than the DRAM capacitor cell. But until that happens, DRAM will continue to believe a position where ultimate low-cost and density are critical, and non-volatility, low power, and instant ‘on’ are not valued,” Hoberman said. “Until that day, however, STT-MRAM will exist an excellent candidate to supplant DRAM in places where volatility, refresh power, and refresh duty cycle are demanding for system designers.”

So will STT-MRAM ever supplant DRAM? Not in the near term. For one thing, the cheapest alternative may simply exist reconfiguring or extending the life of existing DRAM technology.

Marvell’s approach is to better the functionality of DRAM by adding Final flush Cache, automatically loading code as needed and purging code that isn’t needed. “This is optimized to better the caching rate by up to 99%,” said Sheng Huang, Marvell’s director of technical marketing. “You execute this by taking odds of an algorithm, which allows us to design a smaller lookup table.”

Rambus likewise is trying to eke more out of DRAM by altering the basic data architecture. “The bottleneck is touching the data,” said Steven Woo, vice president of solutions marketing at Rambus. “It’s better to slouch the processing to the data, which is smaller. They need to arbiter about how to address more modern bottlenecks.”

Still, there are plenty of next-generation memory types here already, and more are on the way. Time will Tell which ones will prevail—and which ones will not.

Related StoriesMemory Hierarchy Shakeup3D NAND Market Heats UpWhat’s Next For DRAM?The Future Of memory section 3Part 3: Security, process variation, shortage of other IP at advanced nodes, and too many foundry processes.The Future Of memory section 2Part 2: The repercussion of 2.5D and fan-outs on power and performance, and when this technology will disappear mainstream.The Future Of memory section 1Part 1: DDR5 spec being defined; novel SRAM under development.



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